Electron energy state dependence on the shape and size of semiconductor quantum dots
Identifieur interne : 00FB39 ( Main/Repository ); précédent : 00FB38; suivant : 00FB40Electron energy state dependence on the shape and size of semiconductor quantum dots
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Abstract
In this article we present a unified model for studying the effect of the sizes and shapes of small semiconductor quantum dots on the electron and hole energy states. We solved the three-dimensional effective one band Schrodinger equation for semiconductor quantum dots with disk, lenticular, and conical shapes. For small InAs/GaAs quantum dots we found a substantial difference in the ground state and first excited state electron energies for dots with the same volume but different shapes. Electron energy dependence on volume is found to be quite different from the commonly quoted V-2/3. The exponent can vary over a wide range and depends on the dot shapes. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron energy state dependence on the shape and size of semiconductor quantum dots</title><author><name sortKey="Li, Yiming" uniqKey="Li Y">Yiming Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Nano Device Laboratories, Hsinchu, 300 Taiwan</s1><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>National Nano Device Laboratories, Hsinchu</wicri:regionArea><wicri:noRegion>National Nano Device Laboratories, Hsinchu, 300 Taiwan</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Kiev Taras Shevchenko University, Kiev 252030, Ukraine</s1></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Kiev Taras Shevchenko University, Kiev 252030</wicri:regionArea><wicri:noRegion>Kiev 252030</wicri:noRegion></affiliation></author><author><name sortKey="Voskoboynikov, O" uniqKey="Voskoboynikov O">O. Voskoboynikov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Kiev Taras Shevchenko University, Kiev 252030, Ukraine</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Kiev Taras Shevchenko University, Kiev 252030</wicri:regionArea><wicri:noRegion>Kiev 252030</wicri:noRegion></affiliation></author><author><name sortKey="Lee, C P" uniqKey="Lee C">C. P. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Sze, S M" uniqKey="Sze S">S. M. Sze</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Tretyak, O" uniqKey="Tretyak O">O. Tretyak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Nano Device Laboratories, Hsinchu, 300 Taiwan</s1><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>National Nano Device Laboratories, Hsinchu</wicri:regionArea><wicri:noRegion>National Nano Device Laboratories, Hsinchu, 300 Taiwan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0489328</idno><date when="2001-12-15">2001-12-15</date><idno type="stanalyst">PASCAL 01-0489328 AIP</idno><idno type="RBID">Pascal:01-0489328</idno><idno type="wicri:Area/Main/Corpus">010325</idno><idno type="wicri:Area/Main/Repository">00FB39</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Schroedinger equation</term><term>Semiconductor quantum dots</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7321L</term><term>8105E</term><term>8107T</term><term>0365G</term><term>Etude théorique</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Equation Schrödinger</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this article we present a unified model for studying the effect of the sizes and shapes of small semiconductor quantum dots on the electron and hole energy states. We solved the three-dimensional effective one band Schrodinger equation for semiconductor quantum dots with disk, lenticular, and conical shapes. For small InAs/GaAs quantum dots we found a substantial difference in the ground state and first excited state electron energies for dots with the same volume but different shapes. Electron energy dependence on volume is found to be quite different from the commonly quoted V<sup>-2/3</sup>. The exponent can vary over a wide range and depends on the dot shapes. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electron energy state dependence on the shape and size of semiconductor quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>LI (Yiming)</s1></fA11><fA11 i1="02" i2="1"><s1>VOSKOBOYNIKOV (O.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (C. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>SZE (S. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>TRETYAK (O.)</s1></fA11><fA14 i1="01"><s1>National Nano Device Laboratories, Hsinchu, 300 Taiwan</s1><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Kiev Taras Shevchenko University, Kiev 252030, Ukraine</s1><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>Kiev Taras Shevchenko University, Kiev 252030, Ukraine</s1></fA14><fA20><s1>6416-6420</s1></fA20><fA21><s1>2001-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0489328</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this article we present a unified model for studying the effect of the sizes and shapes of small semiconductor quantum dots on the electron and hole energy states. We solved the three-dimensional effective one band Schrodinger equation for semiconductor quantum dots with disk, lenticular, and conical shapes. For small InAs/GaAs quantum dots we found a substantial difference in the ground state and first excited state electron energies for dots with the same volume but different shapes. Electron energy dependence on volume is found to be quite different from the commonly quoted V<sup>-2/3</sup>. 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